| PART |
Description |
Maker |
| EDI9LC644V1312BC EDI9LC644V1310BC EDI9LC644V1512BC |
SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:133MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
|
White Electronic Designs
|
| AS7C33128PFD36A-166TQI AS7C33128PFD32A AS7C33128PF |
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 166MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| W83194R-39/-39A W83194R-39A |
100MHz/133 MHz Intel BX/ZX, VIA PC133 Clock Gen., 3-DIMM, with S.S.T.
100MHZ 3-DIMM CLOCK
|
Winbond Electronics
|
| HYB25L512160AC-7.5 HYE25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16) 133MHz 3-3-3
Specialty DRAMs - 512M (32Mx16)133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| WEDPN16M64VR-125BC WEDPN16M64VR-100BM WEDPN16M64VR |
125MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
100MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
133MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
|
White Electronic Designs
|
| K4S560432D-NC75 K4S560432D-NC7C K4S560432D-NC1H K4 |
256Mbit SDRAM, LVTTL, 133MHz
|
Samsung Electronic
|
| HYB39L128160AC-7.5 HYB39L128160AT-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
|
Infineon
|
| ICS932S203 932S203YGLXT 932S203YFLXT |
Frequency Generator with 133MHz Differential CPU Clocks
|
http://
Integrated Device Technology
|
| IS61SP6464-133PQ |
133MHz; 3.3V; 64K x 64 synchronous pipelined static RAM
|
ICSI
|
| IS25WP032 IS25WP064 |
1.8V SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI
|
Integrated Silicon Solu...
|
| KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S80 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
